型号:

IXFX210N17T

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 210A 170V PLUS247
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXFX210N17T PDF
标准包装 30
系列 GigaMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 170V
电流 - 连续漏极(Id) @ 25° C 210A
开态Rds(最大)@ Id, Vgs @ 25° C 7.5 毫欧 @ 60A,10V
Id 时的 Vgs(th)(最大) 5V @ 4mA
闸电荷(Qg) @ Vgs 285nC @ 10V
输入电容 (Ciss) @ Vds 18800pF @ 25V
功率 - 最大 1150W
安装类型 通孔
封装/外壳 TO-247-3
供应商设备封装 PLUS247?-3
包装 管件
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